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    面向半导体晶圆抛光的磁流变抛光液剪切应力分析

    Shear Stress Analysis of Magneto-Rheological Polishing Fluids for Semiconductor Wafer Polishing

    • 摘要: 为提升半导体晶圆的抛光效率,构建了一个针对磁流变抛光液的剪切应力分析模型.该模型基于磁流变抛光液中磁性颗粒的成链机制,分析了磁性颗粒与磨粒之间的相互作用.通过应用库仑定律,计算了磁性颗粒间的平均吸引力,并考虑了磨粒对模型的影响.通过受力分析确定了实现颗粒滑移所需的外部剪切应力,并引入指数分布来描述剪切应力与剪切速率之间的函数关系.实验和有限元仿真分析均验证了模型的有效性,为磁流变抛光液的制备和工艺参数的优化提供了理论依据.

       

      Abstract: To enhance the polishing efficiency of semiconductor wafers,this study developed a shear stress analysis model for magnetorheological polishing fluid.The model is founded on the chaining mechanism of magnetic particles within the fluid,examining the interplay between magnetic and abrasive particles.Utilizing Coulomb’s law,the average attractive force between magnetic particles was calculated,with consideration of the impact of abrasive particles.Additionally,by analyzing the forces exerted on particles under shear,the external shear stress required for particle slippage was determined.An exponential distribution was introduced to establish a functional relationship between shear stress and shear rate.Both experimental and finite element simulation analyses confirmed the model’s validity,offering theoretical support for the preparation of magnetorheological polishing fluid and optimization of polishing process parameters.

       

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